Chotsukira cha SiC Chokhala ndi Porous Chokhala ndi Metal-Backed cha Kugwira Ntchito Yopindika & Yopyapyala
Chotsukira cha vacuum cha St.Cera chopangidwa ndi chitsulo chimaphatikiza wosanjikiza wa ceramic wa silicon carbide (SiC) wokhala ndi porous ndi maziko achitsulo opangidwa molondola (aluminiyamu kapena chitsulo chosapanga dzimbiri). Zinthu za SiC zokhala ndi porous (buluu-wakuda, porosity 35–40%, kukula kwa pore 20–30 μm, permeability 60 ml/cm²·min) zimapereka kugawa kwa vacuum kofanana komanso kofatsa pamwamba pa wafer yonse, kuchotsa chizindikiro cha m'mphepete ndikulola chithandizo chosakhudzana ndi ma wafer owonda (≤100 μm) kapena opotoka. Saizi ya SiC imapereka kukulitsa kutentha kochepa (3.5×10⁻⁶/℃), kukhazikika kwa kutentha mpaka 1000°C, komanso mphamvu yosinthasintha pang'ono (32–35 MPa). Maziko achitsulo amawonjezera kulimba kwa kapangidwe kake, kuyika mosavuta kudzera m'mabowo opindika, komanso chitetezo ku kusweka kwa brittle. Chuck iyi ndi yabwino kwambiri pogaya, kudula, komanso kukonza wafer kutentha kwambiri komwe vacuum yofanana ndi kutentha ndikofunikira kwambiri.
Mafotokozedwe (kutengera deta ya SiC yokhala ndi mapopoma):
| Katundu | Mtengo |
| Zinthu Zopangira Ceramic | Silicon Carbide Yokhala ndi Porous (SiC ≥80%) |
| Mtundu | Buluu-wakuda |
| Kuyenda pang'onopang'ono | 35–40% |
| Kukula kwa Mabowo | 20–30 μm |
| Kuchulukana | 2.1–2.3 g/cm³ |
| Kutha kupirira | 60 ml/cm²·mph |
| Mphamvu Yosinthasintha | 32–35 MPa |
| Kuchuluka kwa Kutentha (25-1000°C) | 3.5×10⁻⁶/℃ |
| Kutentha Kwambiri Kwambiri | 1000°C |
| Kukana kwa Magetsi | 10⁻¹⁰ Ω/cm (pa deta yoperekedwa, yomwe imapezeka pa SiC yokhala ndi mabowo) |
| Zida Zachitsulo | Aluminiyamu 6061 kapena Chitsulo Chosapanga Dzira 304 (ngati mukufuna) |
| Kukhuthala kwa Maziko a Chitsulo | 10–30 mm (mwamakonda) |
Dziwani: Mphamvu yopindika ndi yotsika kuposa SiC yokhuthala chifukwa cha ma porosity. Maziko a zitsulo sachokera ku matebulo a ceramic.
Mapulogalamu:
- · Kupukutira ma wafers owonda kumbuyo (≤100 μm)
- · Choyikamo chopindika cha wafer choduladula
- · Kuphika kwa wafer wotentha kwambiri (mpaka 1000°C)
- · Chotsukira chotsukira cha zinthu zofewa kapena zosalimba
Kupanga:
Mbale ya SiC yokhala ndi mabowo (yopangidwa ndi ma pore formers, yopindika) → yolumikizidwa mpaka kusalala ≤10 μm → maziko achitsulo opangidwa ndi ma vacuum ports ndi zinthu zomangira → epoxy bonding kapena mechanical clamping → helium leak test.
Kuwongolera Ubwino:
- · Kukula kwa porosity ndi ma pore kwatsimikiziridwa ndi SEM
- · Kuyesa kulola mpweya kulowa (kuyenda kwa mpweya)
- · Kusalala komwe kumayesedwa ndi laser interferometer
- · Kuchuluka kwa kutayikira kwa helium <1×10⁻⁹ Pa·m³/s
Ubwino woposa Grooved kapena Dense Ceramic Chucks:
- · Palibe chizindikiro cha wafer - vacuum yofanana yopanda mabowo obisika
- · Ma pores odziyeretsa okha - kuchepetsa kutsekeka
- · Imagwirira ma wafer opindika (mpaka 500 μm)
- · Chitsulo choyambira chimaletsa kusweka kwa brittle ndipo chimapangitsa kuti kuphatikizana kukhale kosavuta
Zoletsa:
- · Mphamvu yotsika ya kupindika (32–35 MPa) - pewani kugwedezeka ndi kugwedezeka
- · Kutentha kwa ntchito kumakhala kochepera 1000°C (SiC yokhala ndi porous), koma chomangira chachitsulo cha epoxy chimachepera ≤200°C pokhapokha ngati chatsekedwa ndi makina.
- · Sizoyenera vacuum yokhala ndi mphamvu yothamanga kwambiri (kapangidwe kake ka machubu kamachepetsa kusiyana kwakukulu kwa vacuum)
Kusintha:
- · Chitsulo choyambira: aluminiyamu (yopepuka), chitsulo chosapanga dzimbiri (chosagwira dzimbiri), Invar (yochepa kukula)
- · Kugwirizana: epoxy (≤200°C) kapena chomangira chamakina (mpaka 500°C)
- · Mphete yotsekera m'mphepete yowongolera zone vacuum
Dziwani: Mphamvu yopindika yomwe yaperekedwa (32–35 MPa) ndi yotsika kwambiri poyerekeza ndi zoumba zokhuthala chifukwa cha ma porosity. Gwirani mosamala kuti mupewe kusweka kwa m'mphepete.
